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37 results
2026
Zhu, A., Bennett, D., Larson, D. T., Ezzi, M. M. A., Manousakis, E., & Kaxiras, E. (2026). Twisted bilayer graphene from first principles: Structural and electronic properties. Physical Review B, 113, Article 20. https://doi.org/10.1103/8gvw-4rgk
Zhu, A., Bennett, D., Larson, D. T., Ezzi, M. M. A., Manousakis, E., & Kaxiras, E. (2026). Twisted bilayer graphene from first principles: Structural and electronic properties. Physical Review B, 113, Article 20. https://doi.org/10.1103/8gvw-4rgk
Zhu, A., Bennett, D., Larson, D. T., Ezzi, M. M. A., Manousakis, E., & Kaxiras, E. (2026). Wavefunction textures in twisted bilayer graphene from first principles. Physical Review B, 113, Article 4. https://doi.org/10.1103/2m63-b51d
Zhu, A., Bennett, D., Larson, D. T., Ezzi, M. M. A., Manousakis, E., & Kaxiras, E. (2026). Wavefunction textures in twisted bilayer graphene from first principles. Physical Review B, 113, Article 4. https://doi.org/10.1103/2m63-b51d
2025
Sanchez, J. J., Arora, R., Bennett, D., Larson, D. T., Kaxiras, E., & Comin, R. (2025). Switching topological states via uniaxial strain in 2D materials. ArXiv:2509.03854. https://doi.org/10.48550/arXiv.2509.03854
Sanchez, J. J., Arora, R., Bennett, D., Larson, D. T., Kaxiras, E., & Comin, R. (2025). Switching topological states via uniaxial strain in 2D materials. ArXiv:2509.03854. https://doi.org/10.48550/arXiv.2509.03854
Luo, Y., Ding, D., Valdivia, A. M. M., Larson, D. T., Liu, S., Ng, H. K., Wu, J., Watanabe, K., Taniguchi, T., Kaxiras, E., Park, H., Kim, P., & Wilson, W. L. (2025). Observation of hyperbolic intersubband polaritons in native-dielectric-doped van der Waals semiconductor quantum wells. Nature Communications, 16, 10158. https://doi.org/10.1038/s41467-025-65196-y
Luo, Y., Ding, D., Valdivia, A. M. M., Larson, D. T., Liu, S., Ng, H. K., Wu, J., Watanabe, K., Taniguchi, T., Kaxiras, E., Park, H., Kim, P., & Wilson, W. L. (2025). Observation of hyperbolic intersubband polaritons in native-dielectric-doped van der Waals semiconductor quantum wells. Nature Communications, 16, 10158. https://doi.org/10.1038/s41467-025-65196-y
Larson, D. T., Bennett, D., Ali, A., Chaves, A. S., Arora, R., Rabe, K. M., & Kaxiras, E. (2025). Stacking-dependent electronic structure of ultrathin perovskite bilayers. Physical Review B, 111, Article 12. https://doi.org/10.1103/PhysRevB.111.125131
Larson, D. T., Bennett, D., Ali, A., Chaves, A. S., Arora, R., Rabe, K. M., & Kaxiras, E. (2025). Stacking-dependent electronic structure of ultrathin perovskite bilayers. Physical Review B, 111, Article 12. https://doi.org/10.1103/PhysRevB.111.125131
Arora, R., Barr, A. R., Larson, D. T., Pizzochero, M., & Kaxiras, E. (2025). Engineering Interfacial Charge Transfer through Modulation Doping for 2D Electronics. Physical Review Materials, 9, L021601. https://doi.org/https://doi.org/10.1103/PhysRevMaterials.9.L021601
Arora, R., Barr, A. R., Larson, D. T., Pizzochero, M., & Kaxiras, E. (2025). Engineering Interfacial Charge Transfer through Modulation Doping for 2D Electronics. Physical Review Materials, 9, L021601. https://doi.org/https://doi.org/10.1103/PhysRevMaterials.9.L021601
Ezzi, M. M. A., Zhu, A., Bennett, D., Larson, D. T., & Kaxiras, E. (2025). Universal Symmetries in Twisted Moiré Materials. ArXiv:2505.19485. https://doi.org/10.48550/arXiv.2505.19485
Ezzi, M. M. A., Zhu, A., Bennett, D., Larson, D. T., & Kaxiras, E. (2025). Universal Symmetries in Twisted Moiré Materials. ArXiv:2505.19485. https://doi.org/10.48550/arXiv.2505.19485
2024
Bennett, D., Larson, D., Sharma, L., Carr, S., & Kaxiras, E. (2024). Twisted bilayer graphene revisited: Minimal two-band model for low-energy bands. Physical Review B, 109. https://doi.org/10.48550/arXiv.2310.12308 (Original work published 2024)
Bennett, D., Larson, D., Sharma, L., Carr, S., & Kaxiras, E. (2024). Twisted bilayer graphene revisited: Minimal two-band model for low-energy bands. Physical Review B, 109. https://doi.org/10.48550/arXiv.2310.12308 (Original work published 2024)
Kang, R., Ge, J.-F., He, Y., Zhu, Z., Larson, D. T., Saghir, M., Hoffman, J. D., Balakrishnan, G., & Hoffman, J. E. (2024). Nanoscale variation of the Rashba energy in BiTeI. ArXiv:2402.18779. https://doi.org/10.48550/arXiv.2402.18779
Kang, R., Ge, J.-F., He, Y., Zhu, Z., Larson, D. T., Saghir, M., Hoffman, J. D., Balakrishnan, G., & Hoffman, J. E. (2024). Nanoscale variation of the Rashba energy in BiTeI. ArXiv:2402.18779. https://doi.org/10.48550/arXiv.2402.18779
Arora, R., Barr, A. R., Bennett, D., Larson, D. T., Pizzochero, M., & Kaxiras, E. (2024). Two-dimensional nitride ordered alloys: A class of ultrawide bandgap semiconductors. Physical Review Materials, 8, L111002. https://doi.org/https://doi.org/10.1103/PhysRevMaterials.8.L111002
Arora, R., Barr, A. R., Bennett, D., Larson, D. T., Pizzochero, M., & Kaxiras, E. (2024). Two-dimensional nitride ordered alloys: A class of ultrawide bandgap semiconductors. Physical Review Materials, 8, L111002. https://doi.org/https://doi.org/10.1103/PhysRevMaterials.8.L111002
Rhone, T. D., Bhattarai, R., Gavras, H., Lusch, B., Salim, M., Mattheakis, M., Larson, D., Krockenberger, Y., & Kaxiras, E. (2023). Artificial Intelligence Guided Studies of van der Waals Magnets. Advanced Theory and Simulations, 2300019. https://doi.org/https://doi.org/10.1002/adts.202300019
Rhone, T. D., Bhattarai, R., Gavras, H., Lusch, B., Salim, M., Mattheakis, M., Larson, D., Krockenberger, Y., & Kaxiras, E. (2023). Artificial Intelligence Guided Studies of van der Waals Magnets. Advanced Theory and Simulations, 2300019. https://doi.org/https://doi.org/10.1002/adts.202300019
Chaves, A., Pizzochero, M., Larson, D., Antonelli, A., & Kaxiras, E. (2023). Semiclassical electron and phonon transport from first principles: application to layered thermoelectrics. Journal of Computational Electronics, 1–29. https://doi.org/10.1007/s10825-023-02062-4
Chaves, A., Pizzochero, M., Larson, D., Antonelli, A., & Kaxiras, E. (2023). Semiclassical electron and phonon transport from first principles: application to layered thermoelectrics. Journal of Computational Electronics, 1–29. https://doi.org/10.1007/s10825-023-02062-4